characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5511 rev b maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 600 25 0.250 25 250 100 24 APT6025SVR 600 25 100 30 40 370 2.96 -55 to 150 300 25 30 1300 APT6025SVR 600v 25a 0.250 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching 100% avalanche tested lower leakage surface mount d 3 pak package d 3 pak
symbol i s i sm v sd t rr q rr dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6 min typ max 4300 5160 525 735 220 330 185 275 23 35 85 125 14 28 12 28 55 80 10 20 unit pf nc ns APT6025SVR characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5511 rev b characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/s) source-drain diode ratings and characteristics unit amps volts ns c min typ max 25 100 1.3 580 12 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 4.16mh, r g = 25 , peak i l = 25a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.34 40 unit c/w characteristic junction to case junction to ambient z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.4 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) APT6025SVR 050-5511 rev b 0 50 100 150 200 250 300 0 5 10 15 20 25 02468 0102030405060 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 60 50 40 30 20 10 0 1.3 1.2 1.1 1.0 0.9 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 60 50 40 30 20 10 0 60 50 40 30 20 10 0 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =7v, 10v & 15v v gs =10v v gs =20v t j = 25 c 250sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 0.5 i d [cont.] t j = +125 c t j = +25 c t j = -55 c v gs =7v, 10v & 15v 4.5v 5v 5.5v 6v 4v 4.5v 5v 5.5v 6v 4v
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) APT6025SVR 050-5511 rev b 1 5 10 50 100 600 .01 .1 1 10 50 0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t c =+25 c t j =+150 c single pulse 100 50 10 5 1 0.5 0.1 20 16 12 8 4 0 operation here limited by r ds (on) t j =+150 c t j =+25 c c rss c oss c iss 15,000 10,000 5,000 1,000 500 100 100 50 10 5 1 v ds =120v v ds =480v i d = i d [cont.] 10s 1ms 10ms 100ms dc 100s v ds =300v apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline
|
